Atomic layer deposition (ALD) is a thin film deposition technique that is based on the sequential use of gas phase chemical surface-relative processes. ALD typically uses two chemicals referred to as precursors, which react with the surface of a material one at a time in a sequential and self-limiting manner. Through the repeated exposure to separate precursors, a thin film is deposited. The ALD technique can be the basic synthesis of many nanomaterials.
IST’s specialty is in its large batch reactor, lower temperature ALD in which bio-consumables, micro-well plates and medical instruments are coated in contrast to semiconductor style ALD which utilize small clam-shell reactors, coating one-wafer at a time.
IST’s process equipment enables the use of multiple precursors to enable the combination of ALD with other surface modification chemicals, to create nano-composite / multi-layer structures in one tool set. The benefit is a superior quality film since the entire process is created in-situ.