ALD Thin Films

ALD (Atomic Layer Deposition) is a thin film deposition technique that is based on the sequential use of surface reactions. The chemical precursors react with the surface of a material one at a time in a sequential, self-limiting manner. A majority of ALD reactions uses two chemicals (e.g. A – B – A – B …) but in the IST RPX, the user has more than 5 different precursors available On-Demand to create custom films (e.g. A – B – A – B – A – B – … C – D). Custom films can be engineered on the IST RPX by simply editing an Excel spreadsheet.

The RPX-ALD processes are typically metal oxides used as adhesion layers prior to the application of subsequent surface modification chemistry. Typical ALD films are aluminum oxide, silicon oxide, titanium oxide or zinc oxide.

Typical Surface roughness of Alumina
RMS: ~4 nm

  • Low Temp. (Room Temp to 100oC).
  • High quality oxide layers (equivalent to thermal oxide). Ideal as an adhesion layer for plastics and polymers.
  • Hydrophilic properties for µ-fluidics on other apps.
  • Large Batch Processing.
  • Low Cost.
  • Excellent surface coverage and conformality.
  • Alternative chemical surface reactions with Ozone and/or plasma reactions.
Semiconductor ALD Processes:
  • High Temp.(170oC – 550oC)
  • Primarily for Liners, Gate Dielectrics and Electrical Characteristics.
  • Typically Single Wafer or small clam shell reactors.
  • High Temperature substrates only required.
  • High Cost Equipment.
  • Poor chemical utilization and efficiencies.
Plasma Enhanced CVD
  • Gas Phase Reactions.
  • Surface diffusion effects the film conformality.
  • Film Depositions are dependent on line-of-sight.
  • High Growth Rates in a gas phase reaction as a function of reactant supply.
  • Also dependent on thermal or plasma assisted reactions.
  • Prone to particle generation.

Please Contact Us to discuss your requirements.

Contact Information

Menlo Park, California 94025

Phone: (650) 324-1824